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| CMPT2222A NPN SILICON TRANSISTOR Central DESCRIPTION: TM Semiconductor Corp. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA The CENTRAL SEMICONDUCTOR CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. Marking Code is C1P. 75 40 6.0 600 350 -65 to +150 357 UNITS V V V mA mW oC oC/W ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO ICBO ICEV IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE TEST CONDITIONS VCB=60V VCB=60V, TA=125oC VCE=60V, VEB=3.0V VEB=3.0V IC=10A IC=10mA IE=10A IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=1.0V, IC=150mA MIN MAX 10 10 10 10 UNITS nA A nA nA V V V V V V V 75 40 6.0 0.3 1.0 1.2 2.0 0.6 35 50 75 50 158 SYMBOL hFE hFE fT Cob Cib hie hie hre hre hfe hfe hoe hoe rb'Cc NF td tr ts tf TEST CONDITIONS MIN VCE=10V, IC=150mA 100 VCE=10V, IC=500mA 40 VCE=20V, IC=20mA, f=100MHz 300 VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz 2.0 VCE=10V, IC=10mA, f=1.0kHz 0.25 VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz 50 VCE=10V, IC=10mA, f=1.0kHz 75 VCE=10V, IC=1.0mA, f=1.0kHz 5.0 VCE=10V, IC=10mA, f=1.0kHz 25 VCB=10V, IE=20mA, f=31.8MHz VCE=10V, IC=100A, RS=1.0k, f=1.0kHz VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, IC=150mA, IB1=IB2=15mA VCC=30V, IC=150mA, IB1=IB2=15mA MAX 300 UNITS 8.0 25 8.0 1.25 8.0 4.0 300 375 35 200 150 4.0 10 25 225 60 MHz pF pF k k x10-4 x10-4 mhos mhos ps dB ns ns ns ns All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 159 |
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